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Lee Kong Chian Faculty of Engineering and Science
Published Scholarly Output
Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study
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Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study
Journal
AIP Conference Proceedings
4TH INTERNATIONAL SCIENCES, TECHNOLOGY AND ENGINEERING CONFERENCE (ISTEC) 2020: Exploring Materials for the Future
ISSN
0094-243X
Date Issued
2021
Author(s)
Keat Hoe Yeoh
Khian-Hooi Chew
Tiem Leong Yoon
Duu Sheng Ong
DOI
https://doi.org/10.1063/5.0043063
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