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A Study on the Electronic Properties of Nitric Oxide Annealed MOS Structures Processed on 4H-SiC
Journal
MRS Proceedings
ISSN
0272-9172
Date Issued
2011
Author(s)
Kerlit Chew
Chin-Che Tin
Claude Ahyi
Kim Nie Chong
Sir Cong Chong
Kim Luong Lew
DOI
10.1557/opl.2011.306
File(s)
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Name
Journal Article.png
Size
3.11 KB
Format
PNG
Checksum
(MD5):21881560e0c3c9c06b18c6e8fdc11acf
