Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study

Keat Hoe YeohKhian-Hooi ChewTiem Leong YoonDuu Sheng Ong2024-10-252024-10-252021https://doi.org/10.1063/5.0043063https://dspace-cris.utar.edu.my/handle/123456789/4966Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles studyproceedings-article