A Study on the Electronic Properties of Nitric Oxide Annealed MOS Structures Processed on 4H-SiC

Kerlit ChewChin-Che TinClaude AhyiKim Nie ChongLiang Meng SuanSir Cong ChongKim Luong Lew2025-01-022025-01-02201110.1557/opl.2011.306https://dspace-cris.utar.edu.my/handle/123456789/9833A Study on the Electronic Properties of Nitric Oxide Annealed MOS Structures Processed on 4H-SiCjournal-article